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Dr Themis Prodromakis

University of Southampton
Nano Group, Southampton Nanofabrication Centre
Southampton, SO17 1BJ, UK
+44 (0)23 8059 8803

Resistive switching characteristics of indium-tin-oxide thin film devices

Authors: Ali Khiat, Iulia Salaoru, and Themistoklis Prodromakis.

Published by: Phys. Status Solidi A, 1–6 (2014) / DOI 10.1002/pssa.201330646

We demonstrate that indium-tin-oxide (ITO), when used as an
active core material in metal-insulator-metal type devices,
facilitates resistive switching. We fabricated devices both on
silicon as well as quartz wafers, to demonstrate transparent
devices. Furthermore, we investigated the influence of active
core thickness on the devices' characteristics, showing that their
switching threshold scales with the ITO thickness. Unipolar
switching was observed for devices comprising thick ITO films
while bipolar switching occurred for both thin and thick ITO
films at the absence of high voltage forming steps. Our study
demonstrates that ITO holds good potential for resistive
memory applications.

Funding Research Councils:
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