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Dr Themis Prodromakis

University of Southampton
Nano Group, Southampton Nanofabrication Centre
Southampton, SO17 1BJ, UK
+44 (0)23 8059 8803

Resistive switching of oxygen enhanced TiO2 thin-film devices

Authors: I. Salaoru, T. Prodromakis, A. Khiat and C. Toumazou

Published by: Applied Physics Letters

In this work, we investigate the effect of oxygen-enhanced TiO2 thin films on the switching dynamics of Pt/TiO2/Pt memristive nanodevices. We demonstrate that such devices can be used as resistive random access memory (RRAM) cells without required electroforming. We experimentally demonstrate that devices based on TiO2 films fabricated via sputtering with partial pressures of Ar/O2 6/6 sccm and 2/10 sccm show OFF/ON ratios of six and two orders of magnitude, respectively. Additionally, it was found that a lower O2 flow during sputtering of TiO2 allows for lower energy requirements for switching the devices from a high to low resistive state.

Funding Research Councils:
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